This blog is for the purpose of my class ELE431. This blog is used for discussion forum on any topics in Solid State Devices. Students may post any topics that is related to the subject.
7/27/08
Chapter 2 cont....
What can we say about the position of Fermi level for Degenerate semiconductor.
~The position fermi level moves closer to the band edge at some doping level will actually cross into the conduction band.In this case, it is usuallly the energy of the fermi level that is of more interest than that of the conduction band edge.In the degenerate doped material,if the fermi level is inside the conduction band,the states below Ef are occupied~ ~Azhafizah bt Md.Nor~ ~2007290826~ ~EEB4E~
The fermi level become closer to conduction band if some doping into the semiconductor.For the degenerate doped material, the states of Fermi level were occupied when doping process ocur.
The fermi level moves closer to conduction band at some doping level.at the degenerate doped material, the states of Fermi level were occupied when doping process occur.
The fermi level moves closer to conduction band at some doping level.at the degenerate doped material, the states of Fermi level were occupied when doping process occur.
zuraini muhammad @ mohamed shaari 2007121763 eeb4f
The distance between the bottom of the conduction band and the Fermi energy is a logarithmic function of the donor concentration. As the donor concentration increases, the Fermi level moves closer to the conduction band.
In degenerated semiconductor,fermi level energy are moves closer to the band edge when the increased donor doping.At some doping level the Fermi level will actually crossinto the conduction band. In this case Fermi level that is of more interest than that of the conduction band edge.
For n-type semiconductor,the fermi level is about below the conduction band,but still above the intrinsic band and valence band. while for the p-type semiconductor, the fermi level is at the above of the valence band,but still at the below of the conduction band and intrinsic band.
In degenerated semiconductor,Fermi level energy are moves closer to the band edge when the increased donor doping.At some doping level the Fermi level will actually cross into the conduction band. In this case Fermi level that is of more interest than that of the conduction band edge.so,Ef inside Ec,and state below Ef occupied.
the fermi level over conduction band when heavy doping concentrations process.it equal to the apparent CB.but when light doping fermi level below the donor level.
Fermi level, Ef conceptual and created to allow mathematical calculation of the electron and hole distribution. The expected Fermi level for degenerate semiconductor is to be close to the valence band where the doping is heavy.
The position of Fermi level for degenerate semiconductor is closer to the band edge when the heavier a semiconductor is doped. It is, usually the energy of the Fermi level more interested on the conduction band.
The fermi level moves closer to conduction band at some doping level. the conduction band goes under fermi level when doping process goes high.at the degenerate doped material, the states of Fermi level were occupied when doping process occur. the Fermi level moves closer to the conduction band because the donor concentration increase.
The fermi level moves closer to conduction band at some doping level.At the degenerate doped material, the states of Fermi level were occupied when doping process occur.It is, usually the energy of the Fermi level more interested on the conduction band.
/*MOHD UBAIDILLAH BIN SHAMSUDIN*/ /*2007126591*/ /*EEB4E*/
The fermi level moves closer to conduction band at some doping level.at the degenerate doped material, the states of Fermi level were occupied when doping process occur.
17 comments:
fermi level of semi conductor is still same..and the conduction band goes under fermi level when doping process goes high..
~2007126643~
~The position fermi level moves closer to the band edge at some doping level will actually cross into the conduction band.In this case, it is usuallly the energy of the fermi level that is of more interest than that of the conduction band edge.In the degenerate doped material,if the fermi level is inside the conduction band,the states below Ef are occupied~
~Azhafizah bt Md.Nor~
~2007290826~
~EEB4E~
The fermi level become closer to conduction band if some doping into the semiconductor.For the degenerate doped material, the states of Fermi level were occupied when doping process ocur.
The fermi level moves closer to conduction band at some doping level.at the degenerate doped material, the states of Fermi level were occupied when doping process occur.
The fermi level moves closer to conduction band at some doping level.at the degenerate doped material, the states of Fermi level were occupied when doping process occur.
zuraini muhammad @ mohamed shaari
2007121763
eeb4f
The distance between the bottom of the conduction band and the Fermi
energy is a logarithmic function of the donor concentration. As the
donor concentration increases, the Fermi level moves closer to the
conduction band.
In degenerated semiconductor,fermi level energy are moves closer to the band edge when the increased donor doping.At some doping level the Fermi level will actually crossinto the conduction band. In this case Fermi level that is of more interest than that of the conduction band edge.
mohd ikhwan
eeb4e
For n-type semiconductor,the fermi level is about below the conduction band,but still above the intrinsic band and valence band. while for the p-type semiconductor, the fermi level is at the above of the valence band,but still at the below of the conduction band and intrinsic band.
Nurain Hashim
2007270538
EEB4E
As the
donor concentration increases, the Fermi level moves closer to the
conduction band.
In degenerated semiconductor,Fermi level energy are moves closer to the band edge when the increased donor doping.At some doping level the Fermi level will actually cross into the conduction band. In this case Fermi level that is of more interest than that of the conduction band edge.so,Ef inside Ec,and state below Ef occupied.
the fermi level over conduction band when heavy doping concentrations process.it equal to the apparent CB.but when light doping fermi level below the donor level.
Fermi level, Ef conceptual and created to allow mathematical calculation of the electron
and hole distribution. The expected Fermi level for degenerate semiconductor is to be
close to the valence band where the doping is heavy.
The position of Fermi level for degenerate semiconductor is closer to the band edge when the heavier a semiconductor is doped. It is, usually the energy of the Fermi level more interested on the conduction band.
*2007292004*
*EEB4E*
The fermi level moves closer to conduction band at some doping level. the conduction band goes under fermi level when doping process goes high.at the degenerate doped material, the states of Fermi level were occupied when doping process occur. the Fermi level moves closer to the conduction band because the donor concentration increase.
“MUHAMAD IZUAN BIN IBRAHIM”
“2007126589”
“EEB4E”
The fermi level moves closer to conduction band at some doping level.At the degenerate doped material, the states of Fermi level were occupied when doping process occur.It is, usually the energy of the Fermi level more interested on the conduction band.
/*MOHD UBAIDILLAH BIN SHAMSUDIN*/
/*2007126591*/
/*EEB4E*/
The fermi level moves closer to conduction band at some doping level.at the degenerate doped material, the states of Fermi level were occupied when doping process occur.
mohd khairul anuar bin awang
2007121771
eeb4e
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