This blog is for the purpose of my class ELE431. This blog is used for discussion forum on any topics in Solid State Devices. Students may post any topics that is related to the subject.
7/29/08
Chapter 3
What are the mobility value for electron & hole at low doping concentration?
tension nye bab 3 ni.... banyak plak rumus yg nk kena hafal... tu baru yg hafal,kalo tengok apendix final paper mau x pening...ade sape2 tau cara nk mengurangkan kepeningan yang dalam bab 3 ni...plz.....
~For low doping levels, the coulomb scattering is small, so that the bulk and surface phonon scattering dominate.However, in the low doping,the accumulated carrier concentration is considerably higher than the doping concentration.~ ~Azhafizah bt Md.Nor~ ~2007290826~ ~EEB4E~
At any doping concentration,the mobility decrease when temperature are increase. so for the low doping concentration, the mobility is mostly affected by acuostis phonon scattering
At any doping concentration,the mobility decrease when temperature are increase.For low doping levels, the coulomb scattering is small so the mobility is mostly affected by phonon scattering.
If we refer to figure 3.4 page 117 in textbook,when at low doping concentration mobility carrier for elctron is 1330cm^2/V.s and mobility carrier for hole is 495cm^2/V.s...
refer to figure 3.4 on page 117 in the textbook, at low doping concentration, mobility carrier for elctron is 1330cm^2/V.s and mobility carrier for hole is 495cm^2/V.s
for low doping concentration, mobility value for hole and electron is; µp=495cm2/V µn=1330cm2/V this is because at low doping concentration majority carier and minority carier electron mobilities goes to approach same value..it is same with hole mobility when doping concentration is low.. ~~2007126643~~
the mobility increase as the doping concentration decreases. e.g;s/c si,doping concentration=10'15.. mobility value for hole and electron is;µp=495cm2/V and µn=1330cm2/V
Mobility, µ is a carrier motion to show how well carrier move beside the semiconductor due to electric field. The unit is in cm2/Vs. At low doping concentration, the majority carrier and the minority carrier for both electron and holes approach the same values. The value of mobility for electron, µn is 1330 cm2/Vs while the value of mobility for holes, µp is 495 cm2/Vs. this value obtained from the graph of low field mobility versus doping concentration. (Figure 3.4, page 117)
At any doping concentration,the mobility decrease when temperature are increase.And for low doping levels, the coulomb scattering is small so the mobility is mostly affected by phonon scattering.
21 comments:
tension nye bab 3 ni.... banyak plak rumus yg nk kena hafal... tu baru yg hafal,kalo tengok apendix final paper mau x pening...ade sape2 tau cara nk mengurangkan kepeningan yang dalam bab 3 ni...plz.....
~For low doping levels, the coulomb scattering is small, so that the bulk and surface phonon scattering dominate.However, in the low doping,the accumulated carrier concentration is
considerably higher than the doping concentration.~
~Azhafizah bt Md.Nor~
~2007290826~
~EEB4E~
At any doping concentration,the mobility decrease when temperature are increase. so for the low doping concentration, the mobility is mostly affected by acuostis phonon scattering
At any doping concentration,the mobility decrease when temperature are increase.For low doping levels, the coulomb scattering is small so the mobility is mostly affected by phonon scattering.
zuraini bt muhammad
2007121763
eeb4f
~At low doping concentration,mobilities approach same value(1330 and 495 cm2/Vs).Increasing dopant concentration decreases mobility.Minority carrier mobility is greater than majority carrier mobility.~
~Azhafizah bt Md.Nor~
~2007290826~
~EEB4E~
The mobility value for electron and holes at low doping concentrations,are µn=1330 cm2/Vs and µp=495 cm2/Vs.
The mobility value at low doping concentration for electron and holes ,are µn=1330 cm2/Vs and µp=495 cm2/Vs.
At low doping concentration,the electron mobility is 1330cm^2/V.s, while the hole mobility is 495cm^2/V.s.
At low doping concentration,the electron mobility is 1330cm^2/V.s, while the hole mobility is 495cm^2/V.s.
Nurain Hashim
2007270538
EEB4E
If we refer to figure 3.4 page 117 in textbook,when at low doping concentration mobility carrier for elctron is 1330cm^2/V.s and mobility carrier for hole is 495cm^2/V.s...
shahizawanis bt shamshuri
2006687187
EEB4E
refer to figure 3.4 on page 117 in the textbook, at low doping concentration, mobility carrier for elctron is 1330cm^2/V.s and mobility carrier for hole is 495cm^2/V.s
for low doping concentration, mobility value for hole and electron is;
µp=495cm2/V
µn=1330cm2/V
this is because at low doping concentration majority carier and minority carier electron mobilities goes to approach same value..it is same with hole mobility when doping concentration is low..
~~2007126643~~
The mobility value for electron and holes:
at low doping concentrations,mobilities approach same value are µn=1330 cm2/Vs and µp=495 cm2/Vs.
the mobility increase as the doping concentration decreases.
e.g;s/c si,doping concentration=10'15..
mobility value for hole and electron is;µp=495cm2/V and µn=1330cm2/V
Mobility, µ is a carrier motion to show how well carrier move beside the semiconductor
due to electric field. The unit is in cm2/Vs. At low doping concentration, the majority
carrier and the minority carrier for both electron and holes approach the same values. The
value of mobility for electron, µn is 1330 cm2/Vs while the value of mobility for holes, µp
is 495 cm2/Vs. this value obtained from the graph of low field mobility versus doping
concentration. (Figure 3.4, page 117)
The mobility value for electron and holes at low doping concentration are
µp=495cm2/V.s
µn=1330cm2/V.s
*2007292004
*EEB4E
At any doping concentration,the mobility decrease when temperature are increase.And for low doping levels, the coulomb scattering is small so the mobility is mostly affected by phonon scattering.
mohd hazim
2007270806
eeb4f
The mobility value at low doping concentration for electron and holes ,are µn=1330 cm2/Vs and µp=495 cm2/Vs.
mohd ikhwan
2007290828
eeb4e
At low doping concentration:
The electron mobility is 1330cm^2/V.s, while the hole mobility is 495cm^2/V.s.
>MUHAMAD IZUAN BIN IBRAHIM<
>2007126589<
>EEB4E<
At low doping concentration,the electron mobility is 1330cm^2/V.s, while the hole mobility is 495cm^2/V.s.
/*MOHD UBAIDILLAH BIN SHAMSUDIN*/
/*2007126591*/
/*EEB4E*/
At low doping concentration,the electron mobility is 1330cm^2/V.s, while the hole mobility is 495cm^2/V.s.
mohd khairul anuar bin awang
2007121771
eeb4e
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